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       CDBU0230R-HF SMD Schottky Barrier Diode Page 1 0.071(1.80) 0.063(1.60) 0.014(0.35) Typ. 0.039(1.00) 0.031(0.80) 0.033(0.85) 0.027(0.70) Dimensions in inches and (millimeter) 0.012 (0.30) Typ. 0.028(0.70) Typ. A mA V V 1 200 30 35 IO VR VRRM IFSM 8.3ms single half sine-wave superimposed on rate load(JEDEC method) O C O C +125 +125 -40 TSTG Tj Storage temperature Junction temperature Average forward current Reverse voltage Repetitive peak reverse voltage Forward current,surge peak Parameter Conditions Symbol Min Typ Max Unit uA V 1 0.6 IR VF Reverse current Forward voltage Parameter Conditions Symbol Min Typ Max Unit VR = 1 0 V IF = 2 00 mA 5 O C unless otherwise noted) Maximum Rating (at TA=2 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 REV:A Comchip Technology CO., LTD. QW-G1057 Features - Low reverse current. - Designed for mounting on small surface. - Extremely thin / leadless package. - Majority carrier conduction. Mechanical data - Case: 0603/SOD-523F standard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking code: cathode band & BB - Mounting position: Any - Weight: 0.003 gram(approx.). Io = 2 00 mA VR = 3 0 Volts RoHS Device Halogen Free 0603/SOD-523F |